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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP= 1ms TC= 45C TC= 25C tP= 1ms, TC= 45C VCES IC,nom. IC ICRM 600 200 226 400 V A A A TC= 25C, Transistor Ptot 700 W VGES +/- 20V V IF 200 A IFRM 400 A VR= 0V, tp= 10ms, TVj= 125C I2t 8.450 A2s RMS, f= 50Hz, t= 1min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC= 200A, VGE= 15V, Tvj= 25C IC= 200A, VGE= 15V, Tvj= 125C IC= 4,0mA, VCE= VGE, Tvj= 25C VCE sat min. VGE(th) 4,5 typ. 1,95 2,20 5,5 max. 2,45 6,5 V V V f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V Cies - 9 - nF f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25C VCE= 600V, VGE= 0V, Tvj= 125C VCE= 0V, VGE= 20V, Tvj= 25C Cres - 0,8 1 1 - 500 400 nF A mA nA ICES IGES - prepared by: Andreas Vetter approved by: Michael Hornkamp date of publication: 2000-04-26 revision: 1 1 (8) BSM 200 GD 60 DLC S1 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC Charakteristische Werte / Characteristic values Transistor / Transistor IC= 200A, VCC= 300V Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE= 15V, RG= 1,5, Tvj= 25C VGE= 15V, RG= 1,5, Tvj= 125C IC= 200A, VCC= 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= 15V, RG= 1,5, Tvj= 25C VGE= 15V, RG= 1,5, Tvj= 125C IC= 200A, VCC= 300V Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) VGE= 15V, RG= 1,5, Tvj= 25C VGE= 15V, RG= 1,5, Tvj= 125C IC= 200A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) VGE= 15V, RG= 1,5, Tvj= 25C VGE= 15V, RG= 1,5, Tvj= 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip Tc= 25C IC= 200A, VCC= 300V, VGE= 15V RG= 1,5, Tvj= 125C, L = 15nH IC= 200A, VCC= 300V, VGE= 15V RG= 1,5, Tvj= 125C, L = 15nH tP 10sec, VGE 15V Tvj125C, VCC=360V, VCEmax= VCES -LCE *di/dt Eon tf 33 41 4,6 ns ns mJ td,off 253 285 ns ns tr 43 49 ns ns td,on 163 180 ns ns min. typ. max. Eoff - 6,3 - mJ ISC - 900 - A LCE - 28 - nH RCC'+EE' - 1,8 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF= 200A, VGE= 0V, Tvj= 25C IF= 200A, VGE= 0V, Tvj= 125C IF= 200A, -diF/dt= 4000A/s Ruckstromspitze peak reverse recovery current VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 200A, -diF/dt=4000A/s Sperrverzogerungsladung recoverred charge VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 200A, -diF/dt= 4000A/s Abschaltenergie pro Puls reverse recovery energy VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C Erec 4,1 mJ mJ Qr 12,1 19,7 C C IRM 154 188 A A VF min. - typ. 1,25 1,20 max. 1,6 V V 2 (8) BSM 200 GD 60 DLC S1 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode / diode, DC pro Modul / per module Paste= 1W/m*K / grease= 1W/m*K RthCK RthJC - typ. 0,01 max. 0,18 0,32 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Gewicht weight Schraube M5 screw M5 M Al2O3 225 4 -15 310 +15 Nm % g G Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8) BSM 200 GD 60 DLC S1 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C= f (VCE) VGE= 15V 400 350 Tvj = 25C 300 250 Tvj = 125C IC [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 400 350 300 250 VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V I C= f (VCE) Tvj= 125C IC [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (8) BSM 200 GD 60 DLC S1 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C= f (VGE) VCE= 20V 400 350 300 250 Tvj = 25C Tvj = 125C IC [A] 200 150 100 50 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 400 350 300 250 Tvj = 25C Tvj = 125C I F= f (VF) IF [A] 200 150 100 50 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 VF [V] 5 (8) BSM 200 GD 60 DLC S1 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC Schaltverluste (typisch) Switching losses (typical) E on= f (IC), Eoff= f (IC), Erec= f (IC) RG,on= 1,5,=RG,off = 1,5 , VCC= 300V, Tvj= 125C ,= , 16 14 12 E [mJ] 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 Eon Eoff Erec IC [A] Schaltverluste (typisch) Switching losses (typical) 20 18 16 14 E [mJ] 12 10 8 6 4 2 0 0 2 4 6 8 Eon Eoff Erec E on= f (RG), Eoff= f (RG), Erec= f (RG) IC= 200A , VCE= 300V , Tvj = 125C 10 12 14 16 18 20 RG [] 6 (8) BSM 200 GD 60 DLC S1 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t) 1 0,1 ZthJC [K / W] 0,01 Zth:IGBT Zth:Diode 0,001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] i [sec] ri [K/kW] i [sec] 1 7,6 0,0018 112,8 0,0487 2 94,3 0,0240 108,2 0,0169 3 63,4 0,0651 67,9 0,1069 4 14,6 0,6626 31,1 0,9115 : IGBT : IGBT : Diode : Diode Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 450 400 350 300 250 200 VGE= +15V, R G,off = 1,5, Tvj= 125C , IC [A] 150 100 50 0 0 IC,Modul IC,Chip 100 200 300 400 500 600 700 VCE [V] 7 (8) BSM 200 GD 60 DLC S1 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC Gehausemae / Schaltbild Package outline / Circuit diagram Econo 3 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 19.05 3.81 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 3.81 15.24 5 x 15.24 =76.2 110 P+ / 21 1 2 connections to be made externally 1.15x1.0 P+ / 13 5 6 9 10 19 17 15 3 4 N- / 20 7 8 11 12 N- / 14 IS8 8 (8) BSM 200 GD 60 DLC S1 2000-02-08 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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